Verhoog de productie Rapid Thermal Processing RTP-SA-8 Annealing System
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3 month
Merk: Ganova
Hoog licht:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... Bekijk meer
➤ Op bezoek komen Website
150mm verwerkt het Snelle Thermische Onthardende Systeem met Drie Reeksen Gassen
Prijs: Negotiable
MOQ: 1
Tijd om te bezorgen: 8-10week days
Merk: GaNova
Hoog licht:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Bekijk meer
➤ Op bezoek komen Website
Fe Gesmeerd GaN Substrates Resistivity > 10 ⁶ Ω·De Apparaten van cm rf
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Bekijk meer
➤ Op bezoek komen Website
625um aan 675um 4 Duim Blauwe SSP HOOFD van GaN Epitaxial Wafer On Sapphire Vlakke Saffier
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Bekijk meer
➤ Op bezoek komen Website
Het c-Vliegtuig Sapphire Substrate Wafer van JDCD08-001-006 6inch
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Bekijk meer
➤ Op bezoek komen Website
GaN 2 inch Galliumnitride enkelkristallijnsubstraat
Prijs: Negotiable
MOQ: 1
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... Bekijk meer
➤ Op bezoek komen Website
Single Crystal Gan Epi Wafer Gallium Nitride Substraat 4 inch
Prijs: Negotiable
MOQ: 1
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Bekijk meer
➤ Op bezoek komen Website
4 inch Fe gedopte vrijstaande GaN-substraat Galliumnitried
Prijs: Negotiable
MOQ: 1
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Bekijk meer
➤ Op bezoek komen Website
2 inch Power Device High Electron Mobility Transistor Epitaxiale Wafer
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Bekijk meer
➤ Op bezoek komen Website
625um tot 675um 4 inch Blauwe LED galliumnitride GaN Epitaxiale wafer op saffier SSP Vlak saffier
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Bekijk meer
➤ Op bezoek komen Website
ALN 10*10mm2 AlN enkelkristal 400±50μM S/P/R-klasse
Prijs: Negotiable
MOQ: 1
Tijd om te bezorgen: Negotiable
Merk: GaNova
Hoog licht:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Bekijk meer
➤ Op bezoek komen Website
2 inch GaN op Silicon HEMT Epi wafer voor Power-apparaat
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Bekijk meer
➤ Op bezoek komen Website
2 ′′ 6-inch N-type GaN op saffier epitaxiale wafer voor LED-laser PIN-apparaat
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: 3-4 weeks
Hoog licht:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Bekijk meer
➤ Op bezoek komen Website
1 inch AlN Single Crystal wafer 400±50μM S/P/R Grade
Prijs: Negotiable
Tijd om te bezorgen: Negotiable
Merk: GaNova
Hoog licht:1 Inch aln wafer, aln wafer 1 Inch, aluminum nitride wafer aln
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Bekijk meer
➤ Op bezoek komen Website
GaN-epitaxiale wafer essentieel voor de productie van hoogspanningschipen met hoge frequentie
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: 3-4 weeks
Merk: Ganova
Hoog licht:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Bekijk meer
➤ Op bezoek komen Website
AlGaN-barrière 4 inch GaN op Silicon HEMT Epi wafer galliumnitride GaN-op-Si
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Bekijk meer
➤ Op bezoek komen Website
6 inch GaN op silicium HEMT Epi Wafer Power Device Gallium Nitride GaN op Si
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Bekijk meer
➤ Op bezoek komen Website
GaN violette laser op silicium 2 inch GaN op silicium HEMT Epi wafer UV LD Epi wafer
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Bekijk meer
➤ Op bezoek komen Website
2 inch GaN op Silicon Blue LD Epi wafer GaN blauwe laser op silicium
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Bekijk meer
➤ Op bezoek komen Website
Blauwe LED GaN op Silicon Wafer Blauwe Laser GaN Epitaxiale Wafer
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: Negotiable
Merk: Ganova
Hoog licht:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Bekijk meer
➤ Op bezoek komen Website