GaN Epitaxial Wafer
(69)
Fe Gesmeerd GaN Substrates Resistivity > 10 ⁶ Ω·De Apparaten van cm rf
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Bekijk meer
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625um aan 675um 4 Duim Blauwe SSP HOOFD van GaN Epitaxial Wafer On Sapphire Vlakke Saffier
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Bekijk meer
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5 X 10 mm2 M Gezicht GaN Epitaxiaal Wafeltje Dikte 325um 375um
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... Bekijk meer
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4 inch N-type UID-gedoteerd GaN op saffierwafer SSP-weerstand>0,5 Ω cm LED, laser, PIN epitaxiale wafer
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... Bekijk meer
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4 inch blauwe LED GaN epitaxiale wafer C vliegtuig platte saffier
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... Bekijk meer
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375 um GaN Epitaxiale wafer Vrijstaande U-GaN SI-GaN-substraten
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... Bekijk meer
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4 inch Fe-dopeerd vrijstaand GaN-substraat Galliumnitride-substraat
Prijs: Negotiable
MOQ: 1
Tijd om te bezorgen: Negotiable
Merk: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Bekijk meer
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4 inch Fe-dopeerde vrijstaande GaN-substraat galliumnitride
Prijs: Negotiable
MOQ: 1
Tijd om te bezorgen: Negotiable
Merk: Ganova
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Bekijk meer
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2 inch vrijstaand GaN substraat zonder doping
Prijs: Negotiable
MOQ: 1
Tijd om te bezorgen: Negotiable
Merk: Ganova
1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium... Bekijk meer
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12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:12.5mm gan epi wafer, 2inch gallium nitride wafer, 2Inch gan epi wafer
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputteri... Bekijk meer
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Dikte 370um 430um 2 Duim GaN Epi Wafer Dimensions 50mm
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:2 Inch GaN Epi Wafer, 370um single crystal wafer, 430um GaN Epi Wafer
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently... Bekijk meer
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5x10mm2 GaN epitaxiaal wafeltje Un-gedoteerd SI-type
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:GaN Epitaxial Wafer SI Type, 5x10.5mm2 gan epi wafer, 5x10.5mm2 GaN Epitaxial Wafer
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, hig... Bekijk meer
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Single Crystal Gallium Nitride Halfgeleider Wafer TTV 10um
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... Bekijk meer
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Het Vliegtuig van het de Halfgeleiderwafeltje 325um 375um C van het galliumnitride
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... Bekijk meer
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5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... Bekijk meer
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De V.N. Gesmeerd n-Type GaN Single Crystal Substrate 5x10mm2 M Face
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... Bekijk meer
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625um tot 675um 4 inch Blauwe LED galliumnitride GaN Epitaxiale wafer op saffier SSP Vlak saffier
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Bekijk meer
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GaN Epitaxial Wafer Essential for High Voltage High Frequency Chip Production
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: 3-4 weeks
Merk: Ganova
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Bekijk meer
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2–6-inch N-type GaN on Sapphire Epitaxial Wafer for LED laser PIN Device
Prijs: Negotiable
MOQ: 5
Tijd om te bezorgen: 3-4 weeks
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Bekijk meer
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better perfo... Bekijk meer
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