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Ga2O3 Wafeltje

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China Sn Doping Ga2O3 Wafer Single Crystal Substraat 10x10mm2 Te koop

Sn Doping Ga2O3 Wafer Single Crystal Substraat 10x10mm2

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... Bekijk meer
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China Enig Kant Opgepoetst Ga2O3-Wafeltje Enig Crystal Substrate Te koop

Enig Kant Opgepoetst Ga2O3-Wafeltje Enig Crystal Substrate

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Side Polished Ga2O3 Wafer, 0.6mm gallium nitride substrate, Ga2O3 Wafer UKAS
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain c... Bekijk meer
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China 0.6mm 0.8mm Ga2O3 kiezen Crystal Substrate Single Polishing uit Te koop

0.6mm 0.8mm Ga2O3 kiezen Crystal Substrate Single Polishing uit

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Ga2O3 Single Crystal Substrate, Gallium Oxide wafer 0.6mm, 0.8mm Single Crystal Substrate
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal subs... Bekijk meer
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China JDCD04-001-007 10x10mm2(010)Sn-gedoteerd vrijstaand Ga2O3 enkelvoudig kristalsubstraat Productkwaliteit enkel polijsten Te koop

JDCD04-001-007 10x10mm2(010)Sn-gedoteerd vrijstaand Ga2O3 enkelvoudig kristalsubstraat Productkwaliteit enkel polijsten

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to p... Bekijk meer
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China Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch Te koop

Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Ga2O3 epitaxial wafer 2 Inch, Single Crystal Substrate 4 Inch, single crystal epitaxial wafer
Ra≤0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filt... Bekijk meer
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China Enkelzijdig gepolijst Ga2O3-substraat Enkele kristaldikte 0,6 mm 0,8 mm Te koop

Enkelzijdig gepolijst Ga2O3-substraat Enkele kristaldikte 0,6 mm 0,8 mm

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:side polished Ga2O3 Substrate, 0.8mm Gallium Oxide substrate, Ga2O3 Substrate Single Crystal
Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 2.00E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor m... Bekijk meer
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China FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm Te koop

FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Ga2O3 Wafer 0.6mm, single crystal substrate 0.8mm, Ga2O3 Wafer 0.8mm
FWHM Bekijk meer
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China Ga2O3 Fe Doped Wafer Single Crystal Substraat 10x10mm2 vrijstaand Te koop

Ga2O3 Fe Doped Wafer Single Crystal Substraat 10x10mm2 vrijstaand

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Ga2O3 Fe Doped Wafer, Single crystal Ga2O3 substrate, Fe Doped Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Ga2O3 has a long history and the phase equilibria of the Al2O3-Ga2O3-... Bekijk meer
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China Semiconductor Single Crystal Gallium Oxide Substrate UID Doping Te koop

Semiconductor Single Crystal Gallium Oxide Substrate UID Doping

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:Single Crystal Gallium Oxide substrate, semiconductor wafer ISO, Gallium Oxide substrate UID Doping
Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM Bekijk meer
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China JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing Te koop

JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Resistance Bekijk meer
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China JDCD04-001-003 10x10mm2 100 (uit 6°) Fe-gedoopt vrijstaand Ga2O3 enkelvoudig kristalsubstraat Productkwaliteit Enkelvoudig polijsten Te koop

JDCD04-001-003 10x10mm2 100 (uit 6°) Fe-gedoopt vrijstaand Ga2O3 enkelvoudig kristalsubstraat Productkwaliteit Enkelvoudig polijsten

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤5nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Power density is greatly improved in gallium nitride devices compar... Bekijk meer
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China 10x15mm2 UID gedoteerd vrijstaand Ga2O3 wafer enkel polijsten Te koop

10x15mm2 UID gedoteerd vrijstaand Ga2O3 wafer enkel polijsten

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:10x15mm2 Ga2O3 Wafer, UID Doped Ga2O3 Substrate, Ga2O3 Wafer Single Polishing
JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic ... Bekijk meer
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China 10x10mm Ga2O3 Wafeltje 10x15mm Enig Crystal Substrate Te koop

10x10mm Ga2O3 Wafeltje 10x15mm Enig Crystal Substrate

Prijs: Negotiable
MOQ: Negotiable
Tijd om te bezorgen: 3-4 week days
Merk: GaNova
Hoog licht:10x10mm Ga2O3 Wafer, 10x15mm single crystal wafer, Ga2O3 Wafer 10x15mm
10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters With increased energy efficiency, smaller req... Bekijk meer
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